Arbitrarily exhaustive generation of contextual sets

Recently obtained results published in Pavičić, M., Arbitrarily exhaustive hypergraph generation of 4-, 6-, 8-, 16-, and 32-dimensional quantum contextual sets, Physical Review A, 95, 06212–1-25 (2017) will be implemented in a series of experiments in the CEMS Research Unit Photonics and Quantum Optics.

Quantum contextuality is a property of quantum systems not to have predetermined values of their observables, in contrast to classical systems. Take an entangled photon pair. Each of the photons is genuinely unpolarized before we let them through polarizers.  After polarizers, measurements find the photons in definite polarization states. Can we assume that these polarizations were somehow predetermined when the pair was created? The so-called contextual sets of states of photons prove that we cannot. Such sets are not of just of a foundational theoretical interest. Recently, it turned out that the “contextuality is the source of a quantum computer’s power” (Nature; cited in the paper). Therefore, it is important for future applications and implementations to find new classes, instances, and structure of contextual sets as well as to design algorithms and programs for obtaining them. In this paper, arbitrary exhaustive hypergraph-based generation of the most explored contextual sets, Kochen-Specker (KS) ones, is carried out in up to 32 dimensions.

Twelve classes of critical KS sets (the ones that cannot be simplified further) are generated and analyzed, huge number of novel types and instances of them obtained and numerous properties of theirs found. Several thousand times more types and instances of KS sets than previously known are generated. All KS sets in three of the classes and in the upper part of a fourth are novel. The generation was carried out with the help of McKay-Megill-Pavičić (MMP) hypergraph language, algorithms, and programs which generate KS sets (see the feature image for two hypergraphs of 8-dim KS sets; also the figure below) strictly following their definition from the Kochen-Specker theorem, which itself celebrates semicentennial this year. This is in contrast to parity proof based algorithms which prevail in the literature and for which the majority of KS sets and even a whole KS class (as the one shown in the Figure below) are simply invisible.

[SEMINAR] Glass based structures fabricated by rf-sputtering

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Dr. Alessandro Chiasera (Consiglio Nazionale delle Ricerche – Istituto di Fotonica e Nanotechologie) će održati predavanje naslova: “Strukture na bazi stakla proizvedene pomoću Rf-sputteringa”. Predavanje će obuhvaćati opis proizvodnje jednodimenzionalnih fotoničkih kristala pomoću rf-sputteringa te njihovu karakterizaciju u vidu prostorno ovisne luminiscencije navedenih fotoničkih struktura i njihova lasiranja. Predavanje će biti održano u dvorani “Ivan Supek” u prvom krilu IRB-a u utorak 30.5.2017 u 12h 30 min.

 

[SEMINAR] Kemijska pohrana vodika u kondenziranoj materiji

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Pozivamo Vas na predavanje dr.sc. Nikole Biliškova naslova “Kemijska pohrana vodika u kondenziranoj materiji” u srijedu 9.11.2016. u 14 sati u predavaonici I krila IRB-a.

Vodik se kroz zadnjih nekoliko desetljeća razmatra kao efikasan nosilac energije, koji bi unaprijedio efikasnost obnovljivih izvora energije. No, konvencionalnom pohranom vodika u plinskoj i tekućoj fazi osigurava se samo vrlo ograničeni sadržaj energije. Zato se razvija koncept kemisorpcijske pohrane u kondenziranoj materiji kao najefikasniji način pohrane vodika. Poteškoće povezane s razvojem takvih sustava za pohranu vodika učinile su tu problematiku jednom od ključnih suvremenih znanstvenih i tehnoloških izazova pri realizaciji široke upotrebe vodika kao nosača energije u bezugljičnoj „vodikovoj ekonomiji“. Iako je taj problem uglavnom kemijske naravi, pronalazak efikasnih sustava, koji zadovoljavaju sve zacrtane tehnološke potrebe, zahtijeva interdisciplinarni pristup.
Predavač će dati pregled dosadašnjih istraživanja na tom polju, koja se provode u Laboratoriju za kemiju čvrstog stanja i kompleksnih spojeva u kontekstu međunarodnih trendova na tom polju, uz naročit naglasak na najnovije rezultate. Također, bit će izneseni i planovi za budućnost, koji su se dijelom već počeli realizirati.

Priopcenje za javnost povodom opstruiranja financiranja iz EU fondova od strane MZOS-a

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PRIOPĆENJE ZA JAVNOST Zagreb, 7. lipnja 2016.

Otvoreno pismo ministru znanosti, obrazovanja i sporta Predragu Šustaru:

Opstruiranjem financiranja iz EU fondova hrvatskih znanstvenih centara izvrsnosti ugrožava se 50 milijuna eura iz strukturnih fondova i radna mjesta za hrvatske znanstvenike – traži se hitna reakcija ministra Šustara!

Pedeset milijuna eura, upitna radna mjesta za čak tri stotine doktoranada i postdoktoranada, te riskiranje penala od Europske komisije, samo su dio crne statistike koja ozbiljno prijeti Republici Hrvatskoj (RH), a odvija se u sjeni problema s kurikularnom reformom.

Deset znanstvenih centara izvrsnosti proglašenih od strane Ministarstva znanosti obrazovanje i sporta (MZOS) tijekom 2014. i 2015. godine na prijedlog Nacionalnog vijeća za znanost, visoko obrazovanje i tehnološki razvoj, posljednjih su nekoliko mjeseci postalo taocem MZOS-a.

Naime, RH se strateški odredila kroz Operativni program (OP) za financiranje Znanstvenih centara izvrsnosti (2014 – 2020), te se prema Operativnom programu očekuje 50 milijuna eura iz Europskog fonda za regionalni razvoj (ERDF) koji bi bili na raspolaganju proglašenim centrima.

Kako bi centri mogli iskoristiti europska sredstva, MZOS je obvezan raspisati natječaj. Prvi indikativni rok za raspisivanje natječaja bio je 31. ožujka, te je pomaknut na 1. lipnja 2016., a natječaj još nije raspisan.

Unatoč brojnim službenim molbama za poštivanjem obveza koje su voditelji Znanstvenih centara izvrsnosti posljednjih mjeseci dostavili ministru Šustaru i premijeru Oreškoviću s upozorenjem da je RH preuzela obvezu te je dužna raspisati planirani natječaj iz strukturnih fondova u sklopu kojih bi se izvršila evaluacija planiranih troškova u okviru pojedinih centara, s današnjim datumom MZOS još uvijek nije aktivirao natječaj Europskog fonda za regionalni razvoj (ERDF) koji bi omogućio povlačenje čak 50 milijuna eura za Znanstvene centre izvrsnosti. Time se ozbiljno ugrožava realizacija znanstvenih aktivnosti proglašenih ZCI-a i gubitak 50 milijuna eura iz EU te zapošljavanje 300 mladih stručnjaka.

Podsjetimo, MZOS je proglasio Znanstvene centre izvrsnosti iz područja prirodnih, biomedicinskih, biotehničkih i tehničkih znanosti nakon zahtjevnih kriterija javnog natječaja, uključujući opsežne domaće i međunarodne recenzije i intervjue s voditeljima predloženih centara koji su proveli Agencija za znanost i visoko obrazovanje (AZVO) i Nacionalno vijeće za znanost, visoko obrazovanje i tehnološki razvoj. MZOS je potom temeljem članka 29. stavka 2. Zakona o znanstvenoj djelatnosti i visokom obrazovanju (Narodne novine, broj: 123/2003, 105/2004, 174/2004, 2/2007 – Odluka Ustavnog suda Republike Hrvatske, 46/2007, 45/2009,63/2011,94/2013, 139/13 i 101/2014 – Odluka i Rješenje Ustavnog suda Republike Hrvatske) proglasilo znanstvene centre izvrsnosti RH, čiji su članovi izvrsni hrvatski znanstvenici, među nositeljima međunarodne prepoznatljivosti hrvatske znanosti.

Proces prijave, vrednovanja i odabira centara trajao je tri godine, a Vlada RH je nakon provedenog postupka recenzija uskladila program centara s nacionalnim prioritetima i oni su u skladu sa Strategijom pametne specijalizacije (S3). Ovu Strategiju su više od dvije godine izrađivali brojni eksperti iz javnog i privatnog sektora koji se bave istraživanjem i razvojem, te ju je usvojio Hrvatski sabor i Europska komisija za znanost.

Cilj proglašenja centara je bio omogućiti izvrsnim hrvatskim znanstvenicima i institucijama uvjete za vrhunski istraživački rad kroz stabilno i pojačano financiranje te edukaciju mladih znanstvenika i značajan doprinos gospodarstvu RH.

Slijedom navedenog, proizlazi da se nepoštivanjem zadanih obveza od strane MZOS-a te neprovođenjem preuzetih obveza direktno ugrožavaju nacionalni interesi.

Nažalost, jedan od glavnih protivnika ustroja hrvatskih centara izvrsnosti, kao i od strane Europske komisije usvojene pametne specijalizacije (S3) RH, a koja je jedan od glavnih preduvjeta za povlačenje sredstava iz strukturnih fondova, je pomoćnik ministra za znanost dr. sc. Krešimir Zadro.

Poštovani ministre Šustar, otvorenim pismom javnosti obraćamo Vam se ispred svih Znanstvenih centara izvrsnosti (ZCI) iz područja prirodnih, biomedicinskih, biotehničkih i tehničkih znanosti sa zahtjevom da se javno očitujete o razlozima nepoštivanja odluka Vlade RH i neprovođenju usvojenih programa financiranja hrvatskih centara izvrsnosti iz EU fondova te datumu raspisivanja natječaja kako bi se izbjegao crni scenarij.

Vjerujemo da niste spremni potpuno ignorirati izvrsne hrvatske znanstvene skupine i propustiti priliku da se kroz usvojeni program pametne specijalizacije povuku sredstva u iznosu od 50 milijuna eura iz strukturnih fondova.

U situaciji kad se domaća sredstva za znanost i istraživanje sustavno režu, kad se događa egzodus najboljih mladih obrazovanih stručnjaka, znanstvena istraživanja i inovacije preživljavaju velikim dijelom zbog izvrsnosti istraživačkih skupina i velikih napora znanstvenika u povlačenju sredstva iz programa Europske unije, ovakvo opstruiranje rada Znanstvenih centara izvrsnosti da osiguraju europska sredstva za rad i zapošljavanje stručnog kadra je nedopustivo!

S poštovanjem,
voditelji proglašenih Znanstvenih centara izvrsnosti (STEM područja):

Znanstveni centar izvrsnosti za napredne materijale i senzore,
Institut Ruđer Bošković i Institut za fiziku, Zagreb

Dr. sc. Milko Jakšić – Milko.Jaksic@irb.hr
Dr. sc. Mile Ivanda – Mile.Ivanda@irb.hr
Dr. sc. Mario Stipčević – Mario.Stipcevic@irb.hr
Dr. sc. Marko Kralj – mkralj@ifs.hr

Znanstveni centar izvrsnosti za reproduktivnu i regenerativnu medicinu,

Medicinski fakultet, Sveučilište u Zagrebu,
Akademik prof. dr.sc. Slobodan Vukičević – slobodan.vukicevic@mef.hr
Prof. dr. sc. Davor Ježek – davor.jezek@mef.hr

Znanstveni centar izvrsnosti za virusnu imunologiju i cjepiva,
Medicinski fakultet, Sveučilište u Rijeci
Prof. dr. sc. Stipan Jonjić – stipan.jonjic@medri.uniri.hr

Znanstveni centar izvrsnosti za znanost i tehnologiju – STIM, Sveučilište u Splitu
Prof. dr. dr. h.c. Vlasta Bonačić-Koutecky – vbk@cms.hu-berlin.de

Znanstveni centar izvrsnosti za bioraznolikost i molekularno oplemenjivanje bilja, Agronomski fakultet , Sveučilište u Zagrebu
Prof. dr. sc. Zlatko Šatović – zsatovic@agr.hr

Znanstveni centar izvrsnosti za bioprospecting mora
Institut Ruđer Bošković, Zagreb
Dr.sc. Rozelindra Čož-Rakovac – Rozelindra.Coz-Rakovac@irb.hr

Znanstveni centar izvrsnosti za kvantne i kompleksne sustave te reprezentacije Liejevih algebri, Prirodoslovno-matematički fakultet, Sveučilište u Zagrebu

Prof.dr.sc Hrvoje Buljan – hbuljan@phy.hr
Prof. dr. sc. Pavle Pandžić – pandzic@math.hr

Znanstveni centar izvrsnosti za personaliziranu brigu o zdravlju,

Sveučilište Josip Juraj Strossmayer u Osijeku
Prof. dr. sc. Gordan Lauc – glauc@pharma.hr
Prof. dr. sc. Ines Drenjančević – ines.drenjancevic.peric@mefos.hr

Znanstveni centar izvrsnosti za temeljnu, kliničku i translacijsku neuroznanost, Medicinski fakultet, Sveučilište u Zagrebu
Prof. dr. sc. Miloš Judaš – mjudas@hiim.hr

Znanstveni centar izvrsnosti za znanost o podatcima i kooperativne sustave, Fakultet elektrotehnike i računarstva, Sveučilište u Zagrebu

Prof.dr.sc. Sven Lončarić – sven.loncaric@fer.hr
Prof. dr. sc. Ivan Petrović – ivan.petrovic@fer.hr

Priopćenje voditelja proglašenih
            Znanstvenih centara izvrsnosti (STEM područja)             ___________________________________________________________________________________________________

Physics of the Dark Universe Paper “KWISP: An ultra-sensitive force sensor for the Dark Energy sector”

One of the remaining puzzles in physics is the composition of the Universe. Now days we believe that it is made of about 5% ordinary matter, 25% dark matter and 70% of dark energy. Our knowledge about the nature of the dark constituents of the Universe is very feeble. They were introduced to explain some observational data. In particular the dark energy was introduced to explain the observed acceleration in the expansion rate of the Universe. One of the possible mechanisms would be the existence of a light scalar field. To render it compatible with General Relativity in the solar system and “fifth force” searches on Earth they have to be screened. One possibility is a so called “chameleon” mechanism which renders their effective mass dependent on the local matter density. In case they exist they can be produced in the Sun and detected on Earth by a suitable sensor. The detection mechanism relies on the equivalent of the radiation pressure, where solar chameleons impinge on a mobile surface and transfer momentum to it which displaces it from the equilibrium position.

CERN_Courier

Such a sensor has been built and tested in cooperation with the optics laboratory at INFN Trieste where the sensor was situated before transferring it to the final setup at CERN which was noted in the CERN Courier article (see picture). It is based on a thin silicon nitride micro-membrane placed inside a Fabry–Perot optical cavity. By monitoring the cavity characteristic frequencies it is possible to detect the tiny membrane displacements caused by an applied force. Its application to experiments in the Dark Energy sector, such as those for Chameleon-type WISPs, is particularly attractive, as it enables a search for their direct coupling to matter. The sensitivity and the absolute force calibration are given in the article published in the journal Physics of the Dark Universe (impact factor 8.57).

 

Manipulation of macroscopic nano-patterned graphene

Nano-rippled graphene is a structurally modified graphene with a large range of possible applications including sensors, electrodes, optoelectronics, spintronics, and straintronics. In this work, published in the journal Carbon 96 (2016) 243, our colleagues I. Šrut Rakić and M. Kralj from Institute of Physics, together with D. Čapeta (PMF) and M. Plodinec (IRB) have shown that it is possible to synthesize macroscopic graphene sample with well-defined uniaxial periodic modulation on a vicinal metal surface and transfer it to a dielectric support without losing nano-rippled structure.

Transfer schematics

Figure 1. (a) – (d) Schematic representation of the graphene transfer procedure steps. (e) Photograph of the Ir(332) crystal covered with graphene monolayer after the sample has been taken out of UHV. (f) Photograph of an experimental setup for the bubbling transfer. (g) Optical microscopy image (x80 magnification) of the sample during the under-potential treatment. Inset shows the magnified region marked by a black rectangle where the intercalation front indicated by a black arrow can be seen. (h) Photograph of a graphene sheet after the transfer to Si/SiO2.

Structurally modified graphene recently came into focus of graphene research bringing a promise for a wider range of possible graphene applications. The key feature of such systems is a presence of curvature in graphene typically accompanied by strain. Strain has a great effect on graphene electronic structure, conductivity, optical response, and even spin transport which can then be exploited in a rippled system for fabricating targeted optoelectronic, spintronic or generally strain facilitated electronic (straintronic) devices. Moreover, properties of the rippled graphene can be useful for various sensors, electrodes, coatings and even for hydrogen storage. Therefore, it is of great importance to be able to produce a device based on rippled graphene with well-defined uniaxial, 1D, periodic modulation. The key for making such a device is the ability to synthesize and transfer structurally modified graphene to a desirable substrate of interest.

SPM karakterizacija

Figure 2. (a) – (d) AFM topographs at several different locations at the same sample. (e) Fourier transform image of (c) confirming the 1D ordering with a periodicity of 67 nm. (f) AFM line profile corresponding to the green line in (d). Inset shows a simplified ripple cross-section used for strain calculation.

Raman characterization

Figure 3. (a) Raman spectrum of the graphene sample on Si/SiO2 recorded with an unpolarized laser light. (b) A schematic model of the polarized laser light Raman measurement. Black arrows mark laser polarization and blue arrow marks a direction of the graphene ripples. (c) Polar plot showing positions of the 2D peak with polarized light for different laser polarization angle. (d) Raman spectra of two 2D graphene peaks for two different angles of light polarization separated by 90°.

In this paper published in Carbon (IF=6.196) the authors showed that it is possible to grow periodically nano-rippled graphene on a mm scale using a prestructured stepped Ir(332) substrate. The team carried out a transfer of such 1D modulated graphene onto a Si/SiO2 wafer adapting a method called bubbling transfer (Figure 1). The key finding upon the transfer came from AFM (atomic force microscopy) characterization showing that graphene has kept its original periodic 1D rippled structure (Figure 2). Additionally, the presence of uniaxial strain in graphene was confirmed by adapting Raman spectroscopy for polarized measurements where the laser polarization was rotated in a controlled way with respect to macroscopic ripple direction, resolving between strained and unstrained directions in graphene (Figure 3).

This work presents a collaborative interinstitutional effort within the CEMS and brings a relevant achievement for a large scale graphene applications.

Development of the MeV SIMS with sub micron resolution

The MeV secondary ion mass spectrometry (SIMS) technique is based on a concept being developed already in 1974, when the first publications about the desorption of molecular ions using fission fragments from 252Cf source (plasma desorption mass spectrometry – PDMS) appeared. In 2008, group of prof. J. Matsuo from Kyoto University started to use MeV ions from ion beam accelerator accompanied by a time of flight (TOF) mass spectrometer. Comparison to the keV energy ions (used in conventional SIMS), showed significant suppression of fragmentation and simultaneously enhancement the secondary ion yield, which is in particular evident for higher mass molecules (100-1000 Da).
In 2012, Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) setup was constructed and installed at the RBI microbeam beam line as a result of bilateral Croatian – Japan project “Enhanced molecular imaging by focused swift heavy ions”. In attempt to make this technique widely accepted, RBI group performed numerous tests of its applicability to biomedical problems, cultural heritage studies and materials science. Presentely, this work is supported by three international projects on MeV SIMS: ITN Marie Curie SPRITE project on MeV SIMS, UKF project “Study of modern paint materials and their stability using MeV SIMS and other analytical techniques“ and IAEA CRP project “Development of molecular concentration mapping techniques using MeV focused ion beams”.

2D distribution of Na, K, and lipids in CaCo-2 cell. A STIM image (density distribution) is also presented, together with an optical image and TOF-SIMS spectrum.

2D distribution of Na, K, and lipids in CaCo-2 cell. A STIM image (density distribution) is also presented, together with an optical image and TOF-SIMS spectrum.

In the case of biomedical applications it is important to perform molecular mapping at the subcellular level. However, the beam spot size of the existing MeV TOF-SIMS systems, which is typically several microns, is too large and has to be reduced. In order to improve the lateral resolution of the focussed beam, the trigger for the TOF – START was replaced with a timing signal provided by a silicon charged particle detector used for Scanning Transmission Ion Microscopy (STIM). By using a trigger signal from detector instead of the bunching the ion microbeam, significant reduction of the object and collimator slit openings was enabled, leading to the reduction of the ion beam spot size (down to 300 nm). Altogether, due to the well-defined submicron beam focus and the high sensitivity, molecular imaging of a single cell at a sub-cellular level has been for the first time achieved by MeV TOF-SIMS as well. Results of this work has been recently published in Applied Physics Letters: Z. Siketić, I. Bogdanović Radović, M. Jakšić, M. Popović Hadžija, M. Hadžija, Submicron mass spectrometry imaging of single cells by combined use of mega electron volt time-of-flight secondary ion mass spectrometry and scanning transmission ion microscopy. In addition, the leading author of the APL paper Zdravko Siketić, presented this work by invited talk at the 13th International Symposium on Radiation Physics held in September in Beijing, China.

Response of the graphene and gallium nitride to swift heavy ion irradiation

Irradiation of flat solid surface by swift heavy ions can result in the formation of nanoscale surface features like hillocks or craters. These remnants of ion impacts called ion tracks can be observed directly using atomic force microscopy (AFM). Within the research unit Ion Beam Physics and Technology, we have demonstrated in two recently published papers that swift heavy ion beams are versatile tool for nanostructuring graphene and GaN.

Monolayer graphene after exposure to grazing incidence swift heavy ion irradiation (a) 84 MeV Ta, (b) 23 MeV I, (c) 15 MeV Si

Monolayer graphene after exposure to grazing incidence swift heavy ion irradiation (a) 84 MeV Ta, (b) 23 MeV I, (c) 15 MeV Si

In the work “Nanostructuring graphene by dense electronic excitation”, published in Nanotechnology (journal IF = 3.821) we reported detailed investigation of graphene response to the swift heavy ion irradiation in a wide range of energies. It was demonstrated that medium scale accelerator facilities like the one at the RBI can be used successfully for nanostructuring graphene (Figure 1.). By choosing appropriate ion beam irradiation parameters, not only graphene can be pierced, thus producing nanoscale pores within it, but also different kind of defects can be introduced into it in a controlled manner. The study was done in a collaboration with scientists from Germany (Universities Duisburg-Essen, Ulm and Jena), France (GANIL ion accelerator facility in Caen) and RBI (M. Karlušić, M. Jakšić).

In the work “Response of the GaN to energetic ion irradiation: conditions for ion track formation” published in J. Phys. D: Appl. Phys. (journal IF = 2.721) and featured on the journal cover page, we reported results of our investigations regarding swift heavy ion irradiation of wurzite GaN surface, and showed for the first time that grazing incidence small angle X-ray scattering (GISAXS) can be utilized for analysis of such irradiated surface (Figure 2.).

Irradiated GaN surface at IRRSUD, GANIL with 92 MeV Xe, Θ = 1°, Φ = 100/μm2 (a) AFM image and GISAXS spectra taken at different azimuthal angles with respect to orientation of the surface ion tracks: 0° (b), 2° (c), 10° (d).

Irradiated GaN surface at IRRSUD, GANIL with 92 MeV Xe, Θ = 1°, Φ = 100/μm2 (a) AFM image and GISAXS spectra taken at different azimuthal angles with respect to orientation of the surface ion tracks: 0° (b), 2° (c), 10° (d).

coverIn contrast to previous works where nanohillocks were found within the surface ion track, morphology of 92 MeV Xe ion tracks consist of both nanohillocks and nanoholes. For lower energy irradiation using 23 MeV I, ion tracks consist only of nanoholes. In addition, TOF-ERDA measurements showed significant loss of nitrogen during irradiation and opens up the question of the composition of ion tracks. The study was done by the team of scientists from the RBI ion accelerator facility (M. Karlušić, M. Buljan, Z. Siketić, M. Jakšić, B. Šantić), in collaboration with colleagues from GANIL ion accelerator facility (Caen, France), HZDR (Dresden, Germany), Elettra synchrotron (Trieste, Italy) and Universities Duisburg-Essen and Ulm (Germany).

CEMS colloquium in joint organization of IF, IRB, and PD-PMF

 

Prvi tranzistor baziran na jednom sloju MoS2.

First transistor based on a single layer MoS2, which was fabricated in prof. Kis’ group at EPFL.

Next Tuesday, December 22, prof. Andras Kis will present a colloquium titled “2D dichalcogenide electronic materials and devices” at the Institute of Physics. This colloquium of Center of Excellence for Advanced Materials and Sensing Devices is prepared in a joined organization of Institute of Physics, Ruđer Bošković Institute and Department of Physics of Faculty of Science.

Prof. Andras Kis published a pioneering papers on the properties of transistors based on single layer molybdenum disulfide (MoS2) and a research in his group Nanoscale Electronics and Structures regularly brings leading contributions in the field of nanoelectronics on layered 2D materials, which is tightly related to a number of potential applications in electronics, spintronics, optoelectronics, valleytronics, etc.

The colloquium will start at 11 a.m. in lecture hall Mladen Paić at Institute of Physics, Bijenička cesta 46. The abstract is available at this link.

COST Training School on Raman Spectroscopy

COSTCEMS-NFM is organizing the Training School on Raman Spectroscopy for the COST action “Nanospectroscopy” MP1302. The school will take place at the Ruder Boškovic Institute in Zagreb, Croatia, on September 23-25, 2015. Selected topics are historical introduction of the Raman spectroscopy, theory of Raman spectroscopy on molecules and crystals, surface enhanced Raman spectroscopy and applications, Raman spectroscopy of  nanoparticles, Raman scattering on disordered materials, Raman spectroscopy in materials research, Time-resolved techniques with ultrashort pulses in examination of specific vibrational states of matter, application of ESR spectroscopy in probing of vibrational states of disordered materials and practical laboratory courses on Raman spectroscopy. Guest speaker for the school is Prof. Philippe Colomban, UPMC Paris, with the topic “Raman Spectroscopy of advanced materials (fibre, composites, films, ..) for aerospace and energy application”. The preliminary program can be found here. The Training School aims particularly at Early-Stage Researchers. The number of participants for laboratory courses is limited to allow for hands-on training, but the lectures are open to the general public.

UPDATE: Presentation slides, from the tutorial lectures held during the Raman School are available here for the Raman School participants.