CEMS colloquium in joint organization of IF, IRB, and PD-PMF


Prvi tranzistor baziran na jednom sloju MoS2.

First transistor based on a single layer MoS2, which was fabricated in prof. Kis’ group at EPFL.

Next Tuesday, December 22, prof. Andras Kis will present a colloquium titled “2D dichalcogenide electronic materials and devices” at the Institute of Physics. This colloquium of Center of Excellence for Advanced Materials and Sensing Devices is prepared in a joined organization of Institute of Physics, Ruđer Bošković Institute and Department of Physics of Faculty of Science.

Prof. Andras Kis published a pioneering papers on the properties of transistors based on single layer molybdenum disulfide (MoS2) and a research in his group Nanoscale Electronics and Structures regularly brings leading contributions in the field of nanoelectronics on layered 2D materials, which is tightly related to a number of potential applications in electronics, spintronics, optoelectronics, valleytronics, etc.

The colloquium will start at 11 a.m. in lecture hall Mladen Paić at Institute of Physics, Bijenička cesta 46. The abstract is available at this link.

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